High teperature high frequency dynamic/static pressure transducer, MEMS pressure sensor P81


High teperature high frequency dynamic/static pressure transducer, MEMS pressure sensor P81


SensStar deign and provide P81 series pressure transducer, P81 high frequency response pressure sensor utilizes the excellent elastic mechanical properties of silicon, adopts micromachining technology, flush packaging structure, and integrated silicon diaphragm sensing element. Its effective size is small, its dynamic frequency response is extremely high (up to 1MHz), and it can obtain broadband response as low as zero frequency and as high as close to natural frequency, and it has rise time as low as microseconds, Its comprehensive performance is better than that of piezoelectric dynamic pressure sensor. This series of products are suitable for military engineering, chemical explosion test, petroleum exploration and logging, materials, mechanics, civil engineering, geotechnical mechanics, trauma medicine, hydraulic power mechanical test and other scientific tests and modern instruments, and are the first choice for dynamic pressure waveform measurement. Its performance index has reached the international advanced level, which can completely replace the similar foreign products. Optional pen style shock wave pressure sensor.

-MEMS pressure sensitive devices based on SOI

-Flush package, good dynamic characteristics

-Wide range of pressure measurement

-Good long-term stability

 

Specfication

Dynamic Frequency response

up to 1MHz,  10KHz , 50KHz,100KHz,200KHz available

measure medium

Various liquids or gases compatible with silicon, stainless steel and glass

Pressure Range

0~10KPa……60MPa

Nonlinearity

0.05%FS

0.15%FS

0.3%FS

0.5%FS

Hysteresis, Repeatability

0.03%FS

0.1%FS

0.2%FS

0.3%FS

Accuracy

0.1%FS

0.2%FS

0.5%FS(典型)

1%FS

Applied Pressure (proof)

≥200%FS

 Long term stability

better than 0.2%FS/Year

Electrical 

Full scale output

80mV±20mV

Zero output

≤±2mV

Power supply

1.5mA,5mA或9V

Connect

M20, 1/4NPT, Self locking structure

insulation resistance

100MΩ(50VDC)

Environmental

zero temperature

0.03%FS/℃  (typical)

Sensitivity temperature coefficient

0.03%FS/℃  (typical)

Compensation temperature 

0~70℃

-25~50℃

25~125℃

25~175℃

Storage

-40℃~125℃

Humidity

0%~85% RH

Structure

Pressure Connect

M20×1.5,M12×1,others

Materials

1Cr18Ni9TI

Weight

 < 150g